to-251 -3l plastic-encapsulate transistors d882 transistor (npn) features power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 3 a p c collector power dissipation 1.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical chara cteristics (tam b=25 unless otherwise specified ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v(br) ceo i c = 10ma, i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 40 v, i e =0 1 a collector cut-off current i ceo v ce = 30 v, i b =0 10 a emitter cut-off current i ebo v eb = 6 v, i c =0 1 a dc current gain h fe v ce = 2 v, i c = 1a 60 400 collector-emitter saturation voltage v ce (sat) i c = 2a, i b = 0.2 a 0.5 v base-emitter saturation voltage v be (sat) i c = 2a, i b = 0.2 a 1.5 v transition frequency f t v ce = 5v, i c =0.1a f =10mhz 90 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 to-251-3l 1. emit t er 2. collector 3 base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2013
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